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  • Fischer, R.  (5)
  • 1985-1989  (5)
  • 1
    Online Resource
    Online Resource
    Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N -metal-oxide-semiconductor silicon circuits
    AIP Publishing ; 1985
    In:  Applied Physics Letters Vol. 47, No. 9 ( 1985-11-01), p. 983-985
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 47, No. 9 ( 1985-11-01), p. 983-985
    Abstract: We have demonstrated for the first time the compatibility of GaAs with Si N-channel metal-oxide-semiconductor (NMOS) transistors by successfully fabricating GaAs/AlGaAs modulation-doped field-effect transistors (MODFET’s) on a Si wafer containing NMOS devices. The MODFET’s with 2 μ gate length on 6 μ channels exhibited transconductances of 120 and 180 mS/mm at 300 and 77 K, respectively. The NMOS devices exhibited little if any performance degradation in going through the GaAs growth and fabrication process. These results show that the monolithic integration of GaAs devices with Si devices is possible, which may add a new dimension to the already exploding world of electronics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.95952
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1985
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy
    Springer Science and Business Media LLC ; 1986
    In:  MRS Proceedings Vol. 67 ( 1986)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 67 ( 1986)
    Abstract: Recent studies have shown that high quality GaAs films can be grown by MBE on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of threading dislocations, the GaAs/Si epitaxial interfaces have been observed with a 1 MB ultra-high vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface, were found in these epitaxial interfaces. The observation of crosssectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the generation of these two types of misfit dislocations. The mechanism of the reduction of threading dislocations by the tilting of the substrate surface is discussed based on these observations.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-67-85
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1986
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  • 3
    Online Resource
    Online Resource
    Study of heteroepitaxial interfaces by atomic resolution electron microscopy
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 4, No. 4 ( 1986-07-01), p. 896-899
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 4, No. 4 ( 1986-07-01), p. 896-899
    Abstract: Two heteroepitaxial interfaces, GaAs/Si and CdTe/GaAs, have been studied with a 1 MV ultrahigh vacuum, high voltage electron microscope. High resolution images have shown the presence of two types of misfit dislocations in the GaAs/Si interface. One has a Burgers vector parallel to the interface, and the other a Burgers vector inclined from the interface. The slight tilting of the substrate surface from the (100) plane significantly affects the distribution of the two types of misfit dislocations in the interface. The mechanism of the dramatic reduction of the density of threading dislocations in the GaAs epilayer by tilting the substrate surface is explained based on this observation. The atomic structure in the interface between the (111) CdTe epilayer and the (100) GaAs substrate has been investigated with high resolution images taken along two different orientations. High resolution images of the CdTe epilayer which were taken along the [011̄] direction have shown asymmetrical images of Cd and Te pairs. Image calculations have been carried out in order to determine the polarity of the epilayer from these observed images.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.583534
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 4
    Online Resource
    Online Resource
    High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
    AIP Publishing ; 1986
    In:  Applied Physics Letters Vol. 49, No. 5 ( 1986-08-04), p. 277-279
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 49, No. 5 ( 1986-08-04), p. 277-279
    Abstract: Recent studies have shown that high quality GaAs films can be grown by molecular beam epitaxy on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of defects, the atomic structure in the GaAs/Si epitaxial interface has been studied with a 1-MV ultrahigh vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface by 45°, were found in the epitaxial interface. The observation of two cross-sectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the formation of these two types of misfit dislocations. A possible mechanism of the reduction of threading dislocations by tilting the substrate surface is discussed based on these observations.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.97140
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1986
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Structural properties of GaAs on Si and Ge substrates
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 4, No. 2 ( 1986-03-01), p. 642-644
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 4, No. 2 ( 1986-03-01), p. 642-644
    Abstract: We report a detailed x-ray scattering study of GaAs grown on Si and Ge substrates by molecular beam epitaxy. We find that the Q dependence of the peak widths can be completely understood in terms of residual strains in the epitaxial film. This result places lower limits on the domain size and antiphase domain size (if they exist) of 6000 and 4000 Å, respectively. In addition, we find that the GaAs lattice is commensurate with that of the Ge substrate, but that the GaAs lattice is incommensurate with the Si substrate; however, in both cases the GaAs lattice has tetragonal symmetry. We show that the measured lattice parameters and thus the tetragonal distortion can be explained by differential thermal expansion for the Si substrate sample.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.583585
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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    Online Resource
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