GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • AIP Publishing  (67)
  • Feng, Y. P.  (67)
Material
Publisher
  • AIP Publishing  (67)
Person/Organisation
Language
Years
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Defect dynamics and spectral observation of twinning in single crystalline LaAlO3 under subbandgap excitation
    AIP Publishing ; 2011
    In:  Applied Physics Letters Vol. 98, No. 4 ( 2011-01-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 98, No. 4 ( 2011-01-24)
    Abstract: We have investigated the photoluminescence and ultrafast dynamics of LaAlO3 crystal. The photoluminescence consists of a broad spectrum and two sharp peaks, which arise from various defect levels within the bandgap. A doublet splitting of roughly 6 nm is seen in these two sharp peaks. An Al displacement of 0.09 Å in a sublattice, which is possible because of twinning, is adequate to explain the spectral splitting. Femtosecond pump probe experiments reveal further that many of these defect levels have a few picosecond decay times while the lowest defect states have decay times longer than nanosecond to the valence band.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3543840
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Surface ferromagnetism in hydrogenated-ZnO film
    AIP Publishing ; 2011
    In:  Applied Physics Letters Vol. 98, No. 15 ( 2011-04-11)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 98, No. 15 ( 2011-04-11)
    Abstract: Nonmagnetic ZnO films were found to exhibit room temperature ferromagnetism after hydrogen annealing at elevated temperatures (100–500 °C), accompanied by (OH) bonds detection. The areal saturation magnetization Ms (∼1.1×10−5 emu cm−2) was insensitive to film thickness, suggesting surface magnetism. The attribution to OH bonds on surface was further supported when the ferromagnetism disappeared after a short immersion for 1 s in acid solution while ferromagnetism was relatively stable in basic environment. The alternative H2- and Ar-annealing can switch ferromagnetic “on” and “off” state, as the annealing under Ar atmosphere can reduce OH bond quantity significantly. First-principles calculations have further confirmed that OH-terminated ZnO surface belonging to the p31m two-dimensional space group has the lowest formation energy of −2.97 eV and a magnetic moment of 0.30 μB per OH due to unpaired magnetic moment of electrons occupying O 2p orbital. Insufficient surface OH concentration may result in antiferromagnetism and/or paramagnetism.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3581046
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 3
    Online Resource
    Online Resource
    Glass forming abilities of binary Cu100−xZrx (34, 35.5, and 38.2 at. %) metallic glasses: A LAMMPS study
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 105, No. 4 ( 2009-02-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 105, No. 4 ( 2009-02-15)
    Abstract: Using large-scale atomic/molecular massively parallel simulator (LAMMPS), we have studied the liquid behaviors of Cu61.8Zr38.2, Cu64.5Zr35.5, and Cu66Zr34 amorphous alloys including their pair distribution functions, distributions of Voronoi clusters with different coordination numbers, and mean square displacements of Cu and Zr atoms. Compared to Cu61.8Zr38.2 and Cu66Zr34, we found high concentrations of distorted icosahedra with indices of ⟨0,2,8,2⟩ and ⟨0,4,4,4⟩, high numbers of Cu-centered Cu8Zr5 and Cu9Zr4 clusters, and reduced atomic diffusivity of Cu and Zr atoms in molten Cu64.5Zr35.5 alloy. These effects would benefit glass formation in Cu64.5Zr35.5 alloy. Meanwhile, from the viewpoints of local cluster structure, the majority of the glue atoms are Cu atoms in Cu64.5Zr35.5 amorphous alloy, which leads to denser packing and better glass forming ability.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3081979
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 4
    Online Resource
    Online Resource
    Effects of nitrogen incorporation on the electronic structure of rutile-TiO2
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 109, No. 2 ( 2011-01-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 109, No. 2 ( 2011-01-15)
    Abstract: By direct atomic nitrogen (N) doping, high concentration of N is incorporated into TiO2 and the doping effects are investigated. High resolution x-ray photoelectron spectroscopy core-level spectra indicate N substitution for O and formation of Ti–N bonds. Different Ti valent states are found at different N concentrations. Although the shape of the valence spectra changes significantly up on N doping, the band gap narrowing effect is insignificant. First-principles calculations confirm formation of Ti 3d gap states when N concentration exceeds 1 at. %, which leads to pinging of N 2p states in the band gap.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3532051
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 5
    Online Resource
    Online Resource
    Half-metallic Fe2CrSi and non-magnetic Cu2CrAl Heusler alloys for current-perpendicular-to-plane giant magneto-resistance: First principle and experimental study
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 109, No. 7 ( 2011-04-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 109, No. 7 ( 2011-04-01)
    Abstract: We present results of our first principle and experimental study on new Heusler alloys candidates for half-metallic electrode and nonmagnetic spacer in current-perpendicular-to-plane giant magneto-resistance devices. The electronic structures of Fe2CrSi and Cu2CrAl are characterized by high density of states at the Fermi level in the majority spin band with a good match in their majority band structures near the Fermi level. The calculated interfacial spin polarization in Fe2CrSi/Cu2CrAl (100) superlattice is ∼80%. We have also epitaxially grown ferromagnetic A2 Fe-Cr-Si and nonmagnetic L21 Cu-Cr-Al (100) films on Cr-buffered MgO(100) substrates.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3540667
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 6
    Online Resource
    Online Resource
    Electronic structure and magnetic properties of Mn-doped ZnO nanotubes: An ab initio study
    AIP Publishing ; 2010
    In:  Journal of Applied Physics Vol. 108, No. 8 ( 2010-10-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 108, No. 8 ( 2010-10-15)
    Abstract: The electronic and magnetic properties of pure and Mn-doped armchair and zigzag ZnO nanotubes were studied using density functional theory with the generalized gradient approximation. The calculated results show that all of the pure ZnO nanotubes are nonmagnetic and have relatively uniform band gap of 1.66 eV at Γ-point. Both the armchair and zigzag ZnO nanotubes are found to be direct gap and the band gaps are almost independent of tubular structures. For the Mn-doped ZnO nanotubes, it is noted that the band gaps are influenced by three factors, doping concentration, diameter, and chirality of the tube, while the bond lengths between Zn and O and between Mn and O for these structures are only decided by the diameter of the nanotube. The magnetic moments, however, are independent of the chirality from comparison between armchair and zigzag Mn-doped ZnO nanotube, and mainly governed by the doping concentration and diameter of the nanotube. Furthermore, it is found that large magnetic moments appears in Mn-doped ZnO nanotubes, which are principally due to the hybridization between the O 2p and Mn 3d states by our analysis.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3493207
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 7
    Online Resource
    Online Resource
    Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 19 ( 2006-05-08)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 19 ( 2006-05-08)
    Abstract: The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure HfO2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N–Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2202752
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 8
    Online Resource
    Online Resource
    Cu-doped GaN: A dilute magnetic semiconductor from first-principles study
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 89, No. 6 ( 2006-08-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 89, No. 6 ( 2006-08-07)
    Abstract: First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of GaN doped with 6.25% of Cu. The Cu dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The Cu-doped GaN favors ferromagnetic ground state which can be explained in terms of p-d hybridization mechanism, and a Curie temperature around 350K can be expected. These results suggest that the Cu-doped GaN is a promising dilute magnetic semiconductor free of magnetic precipitates and may find applications in the field of spintronics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2335773
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 9
    Online Resource
    Online Resource
    Mechanical control of magnetic states of finite carbon chains encapsulated in single wall carbon nanotubes
    AIP Publishing ; 2010
    In:  Applied Physics Letters Vol. 96, No. 16 ( 2010-04-19)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 96, No. 16 ( 2010-04-19)
    Abstract: Effects of a lateral strain on finite carbon chains encapsulated in armchair carbon nanotubes are investigated using spin-polarized density functional theory. A strain induced transition between magnetic and nonmagnetic states of the encapsulated carbon chain is predicted at certain value of the applied strain which can be easily achieved experimentally, due to variation in interaction strength between the single wall carbon nanotube and the encapsulated carbon chain. Furthermore, this transition is reversible within a certain range of the applied strain. The proposed mechanical control of magnetic state of the hybrid system opens possibility for nanodevices such as mechanomagnetic switch or piezomagnetic sensors.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3397995
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 10
    Online Resource
    Online Resource
    Theoretical prediction of the structure and properties of Sn3N4
    AIP Publishing ; 2004
    In:  Journal of Applied Physics Vol. 96, No. 7 ( 2004-10-01), p. 4015-4017
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 96, No. 7 ( 2004-10-01), p. 4015-4017
    Abstract: First-principles calculations based on plane-wave pseudopotential and local-density approximation (LDA) were carried out to study the structure and properties of Sn3N4. In agreement with experimentally determined crystal structure, γ-Sn3N4, which has a high density, was found to be most energetically favored among the structures considered. We also searched for other possible polymorphs of Sn3N4, which may be stable at higher pressure, by studying the properties of six additional high-pressure structures. Phase transition from the spinel structure to the CaFe2O4 and CaTi2O4-type structures can be expected at pressures of 60GPa and 40GPa, respectively. Sn3N4 is predicted to be a semiconductor with a band gap of 1.15eV within the LDA.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1788836
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...