In:
ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 9, No. 12 ( 2020-12-01), p. 125008-
Abstract:
Ga 2 O 3 films were respectively deposited on m- and r-plane sapphire substrates by LP-MOCVD. The growth pressure greatly influenced the surface morphology and the grain shape, and the grain size obviously decreased with the increasing growth pressure. XRD results indicated that a higher growth pressure helped to suppress the polycrystalline orientation of β -Ga 2 O 3 films grown on m-plane sapphire substrates, but was not conducive to the formation of α -Ga 2 O 3 . Ellipsometer measurement shows that the higher growth pressure will slow down the growth rate, and the deposition rate on the r-plane was significantly faster than the m-plane under the lower growth pressure. The bandgap obtained by fitting the optical absorption spectrum was also consistent with the previous reports.
Type of Medium:
Online Resource
ISSN:
2162-8769
,
2162-8777
DOI:
10.1149/2162-8777/abd48d
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2020
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