In:
Applied Physics Letters, AIP Publishing, Vol. 113, No. 13 ( 2018-09-24)
Abstract:
The electron density and physical stress at the thermally oxidized SiC/SiO2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and in-situ stress measurement. There is no evidence for residual carbon species at the SiO2/SiC. Instead, a ∼1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiOx, 0.3 & lt; x & lt; 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a chemical interaction model is proposed to explain the effect of the nitrogen in terms of both stress reduction and elemental control of the dielectric/SiC interface, resulting in a higher quality gate stack on SiC.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2018
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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