GLORIA

GEOMAR Library Ocean Research Information Access

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Fang, Shuai  (6)
  • 1
    In: CrystEngComm, Royal Society of Chemistry (RSC), Vol. 23, No. 35 ( 2021), p. 6070-6078
    Abstract: Silicon carbide (SiC) is a substance found in natural diamond inclusions. Analyzing the influence of SiC doping on the properties of synthetic diamonds is vital to understanding the growth mechanism of natural diamonds and the material composition of the mantle. In this work, China-type large volume cubic high-pressure apparatus (CHPA) (SPD-6 × 1200) was used to simulate the high-temperature and high-pressure environment of diamond growth. The influence of different SiC doping contents on the crystal characteristics of a Ib-type diamond synthesized in a Fe–Ni–C system was investigated at a pressure of 5.8 GPa and a temperature range of 1650–1670 K. Optical microscopy (OM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS), and photoluminescence spectroscopy (PL) were used to characterize the synthesized crystals. The OM results show that the growth rate of the diamond decreases gradually, and the color changes from yellow to light yellow with an increase in the doping concentration. The FTIR results indicate that the nitrogen element in the crystal mainly appears in the diamond crystal in monatomic form (C center). The nitrogen content in the diamond gradually decreases from 275 ppm to 115 ppm with an increase in the SiC dopant ratio. The Raman data show that the FWHM (full width at half maximum) of the diamond crystal increases with an increase in the doping ratio. The XPS results demonstrate that silicon has successfully entered the diamond lattice with a Si–C bond in the crystal. The PL results indicate that the peak intensity of the nitrogen-vacancy (NV − ) color center (638 nm) in the synthesized diamond crystal increases as the doping ratio increases. As the SiC doping content increases, the peak of the NV 0 color center (575 nm) appears, and the peak intensity increases.
    Type of Medium: Online Resource
    ISSN: 1466-8033
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2021
    detail.hit.zdb_id: 2025075-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 2
    In: Lithos, Elsevier BV, Vol. 404-405 ( 2021-12), p. 106470-
    Type of Medium: Online Resource
    ISSN: 0024-4937
    RVK:
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2021
    detail.hit.zdb_id: 1494884-9
    detail.hit.zdb_id: 221624-3
    SSG: 13
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 3
    Online Resource
    Online Resource
    Royal Society of Chemistry (RSC) ; 2022
    In:  CrystEngComm Vol. 24, No. 9 ( 2022), p. 1773-1781
    In: CrystEngComm, Royal Society of Chemistry (RSC), Vol. 24, No. 9 ( 2022), p. 1773-1781
    Abstract: The synthesis of diamonds with rich nitrogen (N), hydrogen (H) and oxygen (O) elements is a hot topic that needs to be solved in current research. In this work, diamonds were synthesized with C 6 H 5 NO 2 dopants using iron and nickel (FeNi) catalysts under conditions of 5.8 GPa and 1370 °C. We characterized N, H, O co-doped diamonds in detail and profoundly researched the effect of N, H, O on FeNi catalysts. The results indicate that with the increase in the content of C 6 H 5 NO 2 , the crystal growth texture is increasingly obvious, and the surface morphology is increasingly uneven and is eventually cracked. Besides, we noticed that the growth rate of the crystal slowed from 2.07 mg h −1 to 0.15 mg h −1 . Using Fourier transform infrared (FTIR) spectroscopy, we calculated the N concentration inside the crystal; it increased from 154 ppm to 1218 ppm. The Raman spectra indicate that all the synthesized crystals had a high-quality sp 3 structure. X-ray photoelectron spectroscopy (XPS) proved that a small amount of H, O, N entered the lattice of the diamonds. XPS measurement of the metal solvent illustrated that in the doped carbon sources, more oxygen and nitrogen-related components were formed and the proportion of diamond was decreased. SEM-EDS mapping confirms that when the carbon sources are doped with C 6 H 5 NO 2 , the mutual diffusion between carbon sources and the metal solvent is inhibited. XRD results confirmed that when doped, FeN, FeO and FeC 8 emerge, while indispensable intermediates for diamond growth vanish. These results ascertain that with the induction of C 6 H 5 NO 2 in the synthesis cavity, the metal solvent tends to react with the decomposition products of C 6 H 5 NO 2 , thus affecting the graphite conversion to diamond from the carbon source as well as the mutual diffusion between carbon sources and the metal solvent, which eventually leads to the reduction of crystal growth rate. This work further explains the mechanism of decreasing the growth rate and improving the growth conditions of diamonds synthesized using the FeNi catalyst under the condition of N–H–O doping, which provides valuable data for synthesizing diamonds with rich N, H and O content.
    Type of Medium: Online Resource
    ISSN: 1466-8033
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2022
    detail.hit.zdb_id: 2025075-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 4
    In: Chinese Physics B, IOP Publishing, Vol. 31, No. 10 ( 2022-09-01), p. 108104-
    Abstract: Diamond crystals were synthesized with different doping proportions of N–H–O at 5.5 GPa–7.1 GPa and 1370 °C–1450 °C. With the increase in the N–H–O doping ratio, the crystal growth rate decreased, the temperature and pressure conditions required for diamond nucleation became increasingly stringent, and the diamond crystallization process was affected. [111] became the dominant plane of diamonds; surface morphology became block-like; and growth texture, stacking faults, and etch pits increased. The diamond crystals had a two-dimensional growth habit. Increasing the doping concentration also increased the amount of N that entered the diamond crystals as confirmed via Fourier transform infrared spectroscopy. However, crystal quality gradually deteriorated as verified by the red-shifting of Raman peak positions and the widening of the Raman full width at half maximum. With the increase in the doping ratio, the photoluminescence property of the diamond crystals also drastically changed. The intensity of the N vacancy center of the diamond crystals changed, and several Ni-related defect centers, such as the NE1 and NE3 centers, appeared. Diamond synthesis in N–H–O-bearing fluid provides important information for deepening our understanding of the growth characteristics of diamonds in complex systems and the formation mechanism of natural diamonds, which are almost always N-rich and full of various defect centers. Meanwhile, this study proved that the type of defect centers in diamond crystals could be regulated by controlling the N–H–O impurity contents of the synthesis system.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2412147-2
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 5
    In: CrystEngComm, Royal Society of Chemistry (RSC), Vol. 23, No. 6 ( 2021), p. 1406-1414
    Type of Medium: Online Resource
    ISSN: 1466-8033
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2021
    detail.hit.zdb_id: 2025075-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 6
    In: CrystEngComm, Royal Society of Chemistry (RSC), Vol. 23, No. 10 ( 2021), p. 2063-2070
    Type of Medium: Online Resource
    ISSN: 1466-8033
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2021
    detail.hit.zdb_id: 2025075-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...