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  • El Mubarek, H. A. W.  (2)
  • Physics  (2)
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  • Physics  (2)
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  • 1
    Online Resource
    Online Resource
    Reduction of boron thermal diffusion in silicon by high energy fluorine implantation
    AIP Publishing ; 2003
    In:  Applied Physics Letters Vol. 83, No. 20 ( 2003-11-17), p. 4134-4136
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 83, No. 20 ( 2003-11-17), p. 4134-4136
    Abstract: This letter investigates the effect of a deep F+ implant on the diffusion of boron in silicon. The effects on boron thermal diffusion and transient enhanced diffusion are separately studied by characterizing the diffusion of a buried boron marker layer in wafers with and without a 185 keV, 2.3 ×1015 cm−2 F+ implant, and with and without a 288 keV, 6 ×1013 cm−2 P+ implant. In samples given both P+ and F+ implants, the fluorine completely eliminates the transient, enhanced boron diffusion caused by the P+ implant, and in samples implanted with F+ only, the fluorine suppresses the boron thermal diffusion by 65%. These results are explained by the effect of the fluorine on the vacancy concentration in the vicinity of the boron profile.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1622434
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Study of fluorine behavior in silicon by selective point defect injection
    AIP Publishing ; 2005
    In:  Applied Physics Letters Vol. 87, No. 1 ( 2005-07-04)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 87, No. 1 ( 2005-07-04)
    Abstract: This letter reports a point defect injection study of 185keV 2.3×1015cm−2 fluorine implanted silicon. After an inert anneal at 1000°C, fluorine peaks are seen at depths of 0.3Rp and Rp and a shoulder between 0.5–0.7Rp. The shallow peak (at 0.3Rp) is significantly smaller under interstitial injection than under both inert and vacancy injection conditions. For a longer anneal under interstitial injection, both the shallow peak and the shoulder are eliminated. These results support earlier work suggesting that the shallow fluorine peak is due to vacancy-fluorine clusters which are responsible for suppression of boron thermal diffusion in silicon. The elimination of the shallow fluorine peak and the shoulder is explained by the annihilation of vacancies in the clusters with injected interstitials.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1984094
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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