In:
NPG Asia Materials, Springer Science and Business Media LLC, Vol. 14, No. 1 ( 2022-12)
Abstract:
Tin selenide (SnSe) is considered a robust candidate for thermoelectric applications due to its very high thermoelectric figure of merit, ZT, with values of 2.6 in p-type and 2.8 in n-type single crystals. Sn has been replaced with various lower group dopants to achieve successful p-type doping in SnSe with high ZT values. A known, facile, and powerful alternative way to introduce a hole carrier is to use a natural single Sn vacancy, V Sn . Through transport and scanning tunneling microscopy studies, we discovered that V Sn are dominant in high-quality (slow cooling rate) SnSe single crystals, while multiple vacancies, V multi, are dominant in low-quality (high cooling rate) single crystals. Surprisingly, both V Sn and V multi help to increase the power factors of SnSe, whereas samples with dominant V Sn have superior thermoelectric properties in SnSe single crystals. Additionally, the observation that V multi are good p-type sources observed in relatively low-quality single crystals is useful in thermoelectric applications because polycrystalline SnSe can be used due to its mechanical strength; this substance is usually fabricated at very high cooling speeds.
Type of Medium:
Online Resource
ISSN:
1884-4049
,
1884-4057
DOI:
10.1038/s41427-022-00393-5
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2022
detail.hit.zdb_id:
2608333-4
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