In:
Journal of Applied Physics, AIP Publishing, Vol. 114, No. 7 ( 2013-08-21)
Abstract:
Epitaxial ferromagnetic Mn5Ge3 thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn5Ge3 materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn5Ge3/GaAs(001) and Mn5Ge3/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm3 for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn5Ge3 under strain indicate that the strain is the origin of different physical properties of Mn5Ge3 grown on different substrates.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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