In:
physica status solidi c, Wiley, Vol. 11, No. 3-4 ( 2014-02), p. 718-721
Kurzfassung:
This paper is focused on the temperature‐dependence of photoluminescence (PL) internal quantum efficiency (IQE) and defect‐recombination in InGaN light‐emitting diodes. It is found low‐temperature PL‐IQE is remarkably lower than 100% for some samples, suggesting the existence of residual defect‐recombination under low temperature. Theoretical analysis deduces that defect‐recombination cannot be frozen out at low temperature, because it follows T 1/2 temperature‐dependent defect‐capture coefficient without defect‐activation energy. The empirical formulas describing temperature‐dependence of defect‐recombination lifetime and PL‐IQE are correspondingly revised. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Materialart:
Online-Ressource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.v11.3/4
DOI:
10.1002/pssc.201300479
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2014
ZDB Id:
2105580-4
ZDB Id:
2102966-0
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