In:
Photonics Research, Optica Publishing Group, Vol. 9, No. 4 ( 2021-04-01), p. 535-
Abstract:
Recently, 2-μm wave band has gained increasing interest due to its potential application for next-generation optical communication. But the development of 2-μm optical communications is substantially hampered by the modulation speed due to the device bandwidth constraints. Thus, a high-speed modulator is highly demanded at 2 μm. Motivated by this prospect, we demonstrate a high-speed silicon Mach–Zehnder modulator for a 2-μm wave band. The device is configured as a single-ended push–pull structure with waveguide electrorefraction via the free carrier plasma effect. The modulator was fabricated via a multiproject wafer shuttle run at a commercial silicon photonic foundry. The modulation efficiency of a single arm is measured to be 1.6 V · cm . The high-speed characterization is also performed, and the modulation speed can reach 80 Gbit/s with 4-level pulse amplitude modulation (PAM-4) formats.
Type of Medium:
Online Resource
ISSN:
2327-9125
Language:
English
Publisher:
Optica Publishing Group
Publication Date:
2021
detail.hit.zdb_id:
2724783-1
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