In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 8R ( 2012-08-01), p. 080208-
Abstract:
InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P ++ -AlGaAs/N ++ -GaAs TDs grown on 10° off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density ( J peak ) at higher concentration ratios (185×) than the solar cells with P ++ -GaAs/N ++ -InGaP TDs grown on 6° off GaAs substrates. Furthermore, the cell design with P ++ -AlGaAs/N ++ -GaAs TDs grown on 10° off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current–voltage characteristics.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.080208
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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