In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 7A ( 1986-07-01), p. L592-
Abstract:
Annealing effects on the current-voltage characteristics of Al and Al–Si contacts with n-type and p-type 3C-SiC films, epitaxially grown on Si by chemical vapor deposition, have been investigated. Al electrodes on n-type 3C-SiC show ohmic characteristics stable up to 400°C, but show distinct rectifying characteristics with annealing at 900°C. To the contrary, Al on p-type 3C-SiC clearly changes from non-ohmic into ohmic with annealing at 900°C. Al–Si alloys, which are usually used as ohmic electrodes for p-type SiC, show same behavior as AN on n-type 3C-SiC. These results suggest the diffused Al atoms to yield a certain p-type layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.25.L592
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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