In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 59, No. 11 ( 2020-11-01), p. 115502-
Abstract:
Electrical properties of the wafer bonding p-GaAs/n-GaN, p-GaAs/n-Si and p-GaAs/ITO//ITO/n-Si are investigated systematically by scanning Kelvin probe force microscopy (KPFM), capacitance–voltage ( C – V ) and current–voltage ( I – V ) measurements. By using KPFM, the contact potential distributions and contact barrier differences of these bonding heterojunctions with Schottky-like characteristics or ohmic feature have been obtained. The contact barrier differences measured by KPFM match well with those measured by C – V . These barriers indicate the thicker interface layer has a larger barrier height, which could contain more interface states. The I – V curve of the heterostructure with the smaller contact barrier difference is shown as an Ohmic contact feature. In contrast, the I – V curve of the junction with the larger contact barrier difference shows a Schottky contact behavior with a larger turn-on voltage. These behaviors indicate that the electrical conductivity of the bonding sample depends on the bonding interface layer significantly.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abc02a
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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