In:
Journal of Applied Physics, AIP Publishing, Vol. 52, No. 11 ( 1981-11-01), p. 6777-6782
Abstract:
In AlxGa1−x As-GaAs quantum-well heterostructures (QWH’s) or superlattices (SL’s) with coupling barrier sizes LB & lt;50 Å, alloy clustering, owing simply to fluctuations in the random Al-Ga arrangement, causes effective changes in quantum-well size and, as a consequence, a decrease in energy and broadening of the confined-particle states. Data are presented showing that actual quantum-well size changes δLz = δLB can be observed, via luminescence or laser spectral shifts, on all-binary, active-region (AlAs-GaAs) QWH’s or SL’s. The small spectral broadening and downward shift indicate a size change δLz = δLB as small as a monolayer for high-energy, all-binary QWH and SL structures grown by metal-organic chemical vapor deposition. Narrow-spectrum cw 300-K laser operation has been realized at λ∼7500 Å, and should be possible to λ≲6785 Å.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1981
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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