In:
Journal of Applied Physics, AIP Publishing, Vol. 60, No. 12 ( 1986-12-15), p. 4268-4272
Abstract:
Hydrogenated amorphous silicon (a-Si:H) films have been deposited on Corning 7059 glass and other substrates by the thermal decomposition of disilane in a helium flow. The deposition rate of a-Si:H films in a He atmosphere has been found to be significantly higher than that deposited in a hydrogen atmosphere under the same conditions. The a-Si:H films deposited in a He atmosphere showed improved structural properties as compared with those deposited in a hydrogen atmosphere. The properties of a-Si:H films deposited in a helium atmosphere such as density, photoconductivity, minority-carrier diffusion length, gap-state density, etc., have been determined. These films appear to have better electronic properties than the chemical-vapor-deposited a-Si:H films heretofore reported.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1986
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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