In:
Applied Physics Letters, AIP Publishing, Vol. 77, No. 24 ( 2000-12-11), p. 4028-4030
Abstract:
During the crystallization of amorphous YMnO3 thin film on Si (100) at 870 °C in a dry O2 ambient, a nanoprecipitate layer was found between the YMnO3 and the Si substrate. Lattice image processing as well as high-resolution transmission electron microscopy showed that the nanoprecipitate layer was a cubic Y2O3 phase. Also, it showed that a native oxide was consumed by the reaction with the Y atoms. This [111] Y2O3 layer exhibited a local epitaxial relationship to the c-axis oriented (0001) YMnO3. The formation of Y2O3 phase and the consumption of native oxide at the YMnO3/Si interface are due to the Y atom which is better than Mn in its ability to oxidize during heat treatment in O2 ambient.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2000
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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