In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4R ( 2005-04-01), p. 1722-
Abstract:
Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0×10 -15 cm 2 and 7.4×10 -17 cm 2 , respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.1722
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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