In:
Applied Physics Letters, AIP Publishing, Vol. 95, No. 16 ( 2009-10-19)
Abstract:
Unipolar switching in electrical resistivity is demonstrated in Ti-doped amorphous SiOx with suitable electrodes. We studied stacks of Al(30 nm)/SiOx/Pt, Cu/SiOx/Pt, Cu/Al(2 nm)/SiOx/Pt, and Pt/SiOx/TiN grown on Ti/SiO2/Si(100) wafer to investigate the effect of metal electrodes. The nature of interface oxides between top electrodes and SiOx, as elucidated by x-ray photoelectron and Auger-electron spectra, was found to manifestly influence switching-ability. A 30 nm Al top electrode leads to thick interfacial Al2O3, which frustrates resistivity switching, while an ultrathin Al between Cu and SiOx alleviates this problem. The Pt/SiOx/TiN stack, designed to avoid interface oxides, is the best showing narrower distribution in operation voltage and cycling more than 500 times.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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