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  • AIP Publishing  (2)
  • Chin, Tsung-Shune  (2)
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  • AIP Publishing  (2)
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  • 1
    Online Resource
    Online Resource
    5 - nm -thick TaSiC amorphous films stable up to 750°C as a diffusion barrier for copper metallization
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 91, No. 15 ( 2007-10-08)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 91, No. 15 ( 2007-10-08)
    Abstract: Ultrathin TaSiC amorphous films prepared by magnetron cosputtering using TaSi2 and C targets on Si(100), in a sandwiched scheme Si(100)∕TaSiC(5nm)∕Cu, were evaluated for barrier performance in copper metallization. Optimizing carbon content maximizes thermal stability of the films as depicted by sheet-resistance, x-ray diffraction, and transmission electron microscopy examination. The stability temperatures of 700°C (24at.% C) and 750°C (34at.% C) have been systematically verified and discussed. Since Ta, Si, and C are compatible with integrated circuit (IC) processing, the TaSiC films are readily applicable for sub-65-nm IC production.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2799245
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Electrical resistance switching in Ti added amorphous SiOx
    AIP Publishing ; 2009
    In:  Applied Physics Letters Vol. 95, No. 16 ( 2009-10-19)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 95, No. 16 ( 2009-10-19)
    Abstract: Unipolar switching in electrical resistivity is demonstrated in Ti-doped amorphous SiOx with suitable electrodes. We studied stacks of Al(30 nm)/SiOx/Pt, Cu/SiOx/Pt, Cu/Al(2 nm)/SiOx/Pt, and Pt/SiOx/TiN grown on Ti/SiO2/Si(100) wafer to investigate the effect of metal electrodes. The nature of interface oxides between top electrodes and SiOx, as elucidated by x-ray photoelectron and Auger-electron spectra, was found to manifestly influence switching-ability. A 30 nm Al top electrode leads to thick interfacial Al2O3, which frustrates resistivity switching, while an ultrathin Al between Cu and SiOx alleviates this problem. The Pt/SiOx/TiN stack, designed to avoid interface oxides, is the best showing narrower distribution in operation voltage and cycling more than 500 times.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3243983
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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