In:
Applied Physics Letters, AIP Publishing, Vol. 103, No. 14 ( 2013-09-30)
Abstract:
This letter investigates the degradation behavior under hot-carrier stress in InGaZnO thin film transistors with I- and U-shaped asymmetric electrodes. After hot-carrier stress, a serious Vt shift, as well as on-current and subthreshold swing degradations are observed in Id-Vg transfer curve under reverse mode. Moreover, it is found that the Vt instability is caused by hot-electron injection near the drain side, and this phenomenon which is verified by C-V measurement. Furthermore, the location of trapped hot-electron is estimated from the two-stage rise in the gate-to-drain/gate-to-source capacitance curves and then verified by the simulation tool.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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