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  • AIP Publishing  (5)
  • Chi, G. C.  (5)
  • 1995-1999  (5)
Material
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  • AIP Publishing  (5)
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Language
Years
  • 1995-1999  (5)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    A bilayer Ti/Ag ohmic contact for highly doped n -type GaN films
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 2 ( 1996-01-08), p. 235-237
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 2 ( 1996-01-08), p. 235-237
    Abstract: Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm−3. The lowest value for the specific contact resistivity of 6.5×10−5 Ω cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.116471
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 24 ( 1996-06-10), p. 3440-3442
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 24 ( 1996-06-10), p. 3440-3442
    Abstract: Samples of GaN(0001) epitaxial films on sapphire Al2O3(0001) with different thicknesses of GaN buffer layers were characterized by x-ray diffraction method in both in-plane and plane-normal directions. The results show that all the epitaxial films are of good quality with the GaN[101̄0] ∥Al2O3[112̄0] and GaN[12̄10]∥Al2O3[11̄00] . This arrangement of crystal orientation can be attributed to the chemical potential overriding the lattice spacing mismatch. The x-ray results also indicate that the crystal coherence lengths in the in-plane direction are smaller than those measured in the plane-normal direction, i.e., a columnar-like structure normal to the film is observed. The rocking curve widths in the in-plane direction are also larger than those measured in the plane-normal direction. In-plane measurement of rocking curve and coherence length are essential physical quantities directly related to the electron mobility which was measured predominantly in the in-plane direction. The best epitaxial structure is the one grown with 10 nm buffer layer.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115786
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Growth and characterizations of GaN on SiC substrates with buffer layers
    AIP Publishing ; 1997
    In:  Journal of Applied Physics Vol. 82, No. 5 ( 1997-09-01), p. 2378-2382
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 82, No. 5 ( 1997-09-01), p. 2378-2382
    Abstract: High quality GaN epitaxial layers were grown on 6H–SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period GaN/Al0.08Ga0.92N (100 Å/100 Å) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm2/V⋅s and 1.3×1017 cm−3 (at 300 K), respectively. The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8×1012 cm−2 and 5300 cm2/V⋅s, respectively. Strong SdH (Shubnikov–de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-quality 2DEG channel of the GaN/AlGaN bottom heterointerface.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.366048
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 26 ( 1996-06-24), p. 3758-3760
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 26 ( 1996-06-24), p. 3758-3760
    Abstract: The GaN buffer layer was grown on the sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) at 525 °C. The following 1.3 μm epitaxial GaN growth was carried out at 1025 °C. We varied the ramping rate from 12.5 to 100 °C/min to study the quality of the epitaxial GaN. It has been found that the x-ray peak width, photoluminescence (PL) linewidth, Hall mobilities, and carrier concentrations of GaN epitaxial layer strongly depend on the in situ thermal ramping rate. An optimum thermal ramping rate was found to be of 20 °C/min. The maximum mobility is 435 cm2/V s at carrier concentration of 1.7×1017 cm−3. The minimum full width at half maximum (FWHM) of x ray and PL were 5.5 min and 12 meV occur at a ramping rate of 20 °C/min. The decrease of the mobility at high and low ramping rate can be attributed to the thermal stress and the reevaporation of the GaN buffer layer.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115997
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
    AIP Publishing ; 1997
    In:  Applied Physics Letters Vol. 70, No. 19 ( 1997-05-12), p. 2583-2585
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 70, No. 19 ( 1997-05-12), p. 2583-2585
    Abstract: In this letter, we report the observation of the enhanced electron mobility in three different Al0.08Ga0.92N/GaN heterostructures. These structures were deposited on (0001) 6H-SiC substrates by using the low-pressure metalorganic chemical vapor deposition method. The structure was composed of 500 Å AlGaN compositional stair-step layer deposited onto 1.3 μm GaN epitaxial layer. There is a 100 Å GaN Cap layer on top of the AlGaN layer to prevent the oxidation of the AlGaN layer. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility for Al0.08Ga0.92N/GaN heterostructure are 6.6×1012 cm-2 and 5413 cm2/Vs at 77 K, respectively. This high value of mobility is, to the best of our knowledge, the first observed two-dimensional electron gas (2DEG) at the AlGaN/GaN stair-step type of heterostructure. Other interface structures such as graded composition and bulk composition structures were also prepared and 2DEG properties were observed.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.118940
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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    Online Resource
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