In:
Applied Physics Letters, AIP Publishing, Vol. 90, No. 14 ( 2007-04-02)
Abstract:
This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20mA injection current, it was found that forward voltages were 3.33 and 3.39V while output powers were 9.0 and 10.6mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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