In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 2B ( 1998-02-01), p. L200-
Kurzfassung:
In 0.5 Ga 0.5 P grown on GaAs substrates with different tilting angles by solid source molecular beam epitaxy (SSMBE) is studied. The results showed that a weak ordering effect still exists in SSMBE grown epilayers with tilted substrates. However, the ordering effect can be drastically reduced by growing In 0.5 Ga 0.5 P on a 15° tilted substrate with an InAlP/InGaP superlattices (SL) buffer layer. The In 0.5 Ga 0.5 P epilayer grown by this method showed a peak photoluminescence (PL) energy of ∼1.91 eV at room temperature, which is similar to the reported value for a fully disordered sample. The intensity of the ordering effect is characterized by polarized PL spectroscopy, and the reduction in the ordering intensity is attributed to the elimination of initial surface strain by the SL buffer layer.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L200
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1998
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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