In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 4 ( 2022-04-01), p. 045010-
Abstract:
This study investigates the impact of fin profiles under hot carrier stress, which defines different base widths: wide-base samples with the smallest slope, medium-base samples, and narrow-base samples with a larger slope. The performance of the narrow samples is better than the medium samples, regardless of transconductance, on-state current, subthreshold swing or drain-induced barrier lowering, demonstrating that the narrow profile samples’ mobility and gate control are better. In long channel devices, the trend of hot carrier degradation (HCD) is in agreement with previous references, and is dependent on the transverse electric field and the fin shapes. However, this trend does not exist for short-channel devices. Positive bias stress and technology computer aided design simulation are applied for investigation and to clarify the reasons for this abnormal HCD trend. Finally, by fitting the multiple vibrational excitation (MVE) mechanism, the slope of the trend lines in the short channel devices are found to indeed match the bending mode. In other words, the disappearance of the general trend between the HCD and fin profiles is caused by the change in the mechanism in the short-channel device. Because the MVE mechanism is independent from the electric field, the narrow profile fin shape more effectively promotes gate control and better performance without affecting the reliability in short channel devices. These results can provide a clear direction for fin shape designers in the future.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac557f
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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