In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 4S ( 2012-04-01), p. 04DD15-
Abstract:
The formation condition, microstructure, and growth kinetics of the WO x layer for WO x resistive random access memory are investigated. To understand the optimal condition for the rapid thermal oxidation process which forms the WO x layer, various annealing temperature and annealing time are systemically studied through transmission electron microscopy, X-ray diffraction, Raman spectra analyses and electrical characterizations. The growth kinetics for WO x under rapid thermal oxidation is found similar to the one for thermal oxidation on silicon. The electrical forming voltages of the WO x cells are also found independent from the oxide thickness, which further suggests the switching behavior of WO x resistive random access memory takes place at the interface but not the bulk.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.04DD15
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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