In:
Journal of Physics D: Applied Physics, IOP Publishing, Vol. 55, No. 37 ( 2022-09-15), p. 374001-
Abstract:
In order to investigate the photoelectric characteristics of 80 × 120 µ m 2 mini-light-emitting-diodes (mini-LEDs) with sidewall passivation by atomic layer deposition (ALD), this paper uses the techniques of spectrometer-based spectroradiometer and microscopic hyperspectral imaging ( µ -HSI). The temperature-dependent electroluminescence is measured using a spectrometer-based spectroradiometer. By analyzing the rising parts of external quantum efficiency at room temperature with a two-level model, the difference of physical mechanisms between mini-LEDs with ALD and without ALD are determined. In addition, the thermal quenching indicates that the ALD sidewall passivation can enhance the temperature stability of the mini-LEDs. The ALD sidewall passivation also enhances the light extraction efficiency according to the theoretical calculation of transmittance. Moreover, the µ -HSI technique is used to evaluate different local areas of mini-LEDs. The obtained results reveal the optimization on lateral distribution of current density within the chip after sidewall passivation.
Type of Medium:
Online Resource
ISSN:
0022-3727
,
1361-6463
DOI:
10.1088/1361-6463/ac7b51
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
209221-9
detail.hit.zdb_id:
1472948-9
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