In:
AIP Advances, AIP Publishing, Vol. 8, No. 4 ( 2018-04-01)
Abstract:
The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier’s localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers’ localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.
Type of Medium:
Online Resource
ISSN:
2158-3226
Language:
English
Publisher:
AIP Publishing
Publication Date:
2018
detail.hit.zdb_id:
2583909-3
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