In:
Journal of Applied Physics, AIP Publishing, Vol. 108, No. 8 ( 2010-10-15)
Kurzfassung:
Spin-splitting energies of wurtzite AlN and InN are calculated using the linear combination of atomic orbital method, and the data are analyzed utilizing the two-band k⋅p model. It is found that in the k⋅p scheme, a spin-degenerate surface exists in the wurtzite Brillouin zone. Consequently, the D’yakonov-Perel’ spin relaxation mechanism can be effectively suppressed for all spin components in the [001]-grown wurtzite quantum wells (QWs) at a resonant condition through application of appropriate strain or a suitable gate bias. Therefore, wurtzite QWs (e.g., InGaN/AlGaN and GaN/AlGaN) are potential structures for spintronic devices such as the resonant spin lifetime transistor.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2010
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
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