In:
Journal of Applied Physics, AIP Publishing, Vol. 67, No. 6 ( 1990-03-15), p. 2985-2991
Abstract:
Several ferroelectric thin films with n-type or p-type conductivity, including undoped and doped lead zirconate titanate, barium titanate, strontium barium niobate, and potassium niobate, as well as lead barium niobate, were made on silicon single-crystal substrates by the sol-gel process. Self-biased heterojunction effects were observed in both p-ferroelectric thin film on n-silicon and n-ferroelectric thin film on p-silicon by the measurement of current-voltage characteristics. It has been observed that either p-n junction or n-p junction in the ferroelectric-semiconductor systems behave like a rectifying diode. However, the junction effect is weak in the p-ferroelectric thin film on p-silicon system. A physical model based on the consideration of energy-band theory has been constructed in explaining this effect. Possible applications of this effect are discussed.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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