In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 12 ( 2016-12-01), p. 124101-
Kurzfassung:
In this study, we investigate the effect of mechanical strain on the performance of flexible amorphous In–Ga–Zn–O (a-InGaZnO) thin-film transistors. Drain current–gate voltage ( I D – V G ) and capacitance–voltage ( C – V ) transfer curves are measured to analyze the degradation behavior. The I D – V G characteristic exhibits a clear negative shift under mechanical strain regardless of the tension or compression state. In addition, the C – V characteristic curves show a leftward shift with extra distortion or stretching out under mechanical strain. This indicates that InGaZnO generates additional defects under this mechanical strain, a phenomenon that can be attributed to the generation of mechanical-strain-induced oxygen vacancies on the flexible a-InGaZnO TFTs.
Materialart:
Online-Ressource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.124101
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2016
ZDB Id:
2417569-9
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