In:
ECS Transactions, The Electrochemical Society, Vol. 45, No. 7 ( 2012-04-27), p. 119-131
Abstract:
This letter studies the hot-carrier effect in indium-gallium-zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric source/drain devices indicate that different mechanisms dominate the degradation. Since the C-V measurement is highly sensitive to the trap state compared with the I-V characterization, C-V curves are utilized to analyze the hot-carrier stress-induced trap state generation. Furthermore, the asymmetric C-V measurements CGD (gate-to-drain capacitance), CGS (gate-to-source capacitance) are useful to analyze the trap state location in the channel. For the asymmetric device structure, the different source/drain structure under hot-carrier stress-induces an asymmetric electrical field and causes different degradation behaviors. In this work, the on-current and subthreshold swing (S.S.) degrade under low electrical field, whereas the apparent Vt shift occurs under a large electrical field. The different degradation behaviors indicate that trap states are generated under low electrical field and the channel-hot-electron (CHE) effect occurs under a large electrical field.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2012
Permalink