In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 15 ( 2008-04-14)
Abstract:
In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5Ge0.5). The deposited film was annealed in oxygen ambient at 650°C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink