In:
Nature Communications, Springer Science and Business Media LLC, Vol. 11, No. 1 ( 2020-03-12)
Abstract:
Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si 3 N 4 and SiO 2 . While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality ( Q ) factors beyond 1.5 × 10 6 . Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans ( 〉 250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator.
Type of Medium:
Online Resource
ISSN:
2041-1723
DOI:
10.1038/s41467-020-15005-5
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2020
detail.hit.zdb_id:
2553671-0
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