In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 6 ( 2016-06-01), p. 064201-
Abstract:
In this study, a structure of Pt/Cu 18 Si 12 O 70 /TiN has been investigated. By co-sputtering the Cu and SiO 2 targets in the switching layer, we can measure the operation mechanism of complementary resistive switching (CRS). This differs from conventional conductive bridge random access memory (CBRAM) that tends to use Cu electrodes rather than Cu 18 Si 12 O 70 . By changing the voltage and compliance current, we can control device operating characteristics. Because Cu distributes differently in the device depending on this setting, the operating end can be located at either the top or bottom electrode. Device current–voltage ( I – V ) curves are used to demonstrate that the CRS in the CBRAM device is a double-electrode operation.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.064201
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9
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