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  • Chang, Chun-Yen  (5)
  • 1995-1999  (5)
  • 1
    Online Resource
    Online Resource
    Direct Oxidation of Si 1- x Ge x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
    IOP Publishing ; 1998
    In:  Japanese Journal of Applied Physics Vol. 37, No. 2A ( 1998-02-01), p. L122-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 2A ( 1998-02-01), p. L122-
    Abstract: Oxidation of Si 1- x Ge x films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O 2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si 1- x Ge x interface is observed after VUV-induced Si 1- x Ge x oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO 2 and GeO 2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.37.L122
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 3B ( 1997-03-01), p. L323-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3B ( 1997-03-01), p. L323-
    Abstract: In this study, high-quality Si/Si 1- x Ge x /Si p-type modulation-doped heterostructures were grown by ultrahigh-vacuum/chemical vapor deposition (UHV/CVD). High-field magnetotransport measurements revealed Shubnikov-de Hass oscillations in the longitudinal magneto resistance and the integer quantum Hall effect in transverse magnetoresistance illustrating the presence of a well-confined two-dimensional hole gas. The mobilities of the two-dimensional hole gas, as high as 12500 cm 2 /V·s at 0.65 K, were obtained for normal (doped layer at surface side) modulation-doped heterostructures with x = 0.12 at a sheet carrier concentration of 3.45 ×10 11 cm -2 . In addition, for this heterostructure, temperature-dependent measurements of Shubnikov-de Hass oscillations in the range 0.65 K–2.4 K were taken and the hole effective mass of 0.295 m 0 ±0.01 m 0 was obtained.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.L323
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 7B ( 1999-07-01), p. L802-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 7B ( 1999-07-01), p. L802-
    Abstract: This work performs Si ion implantation the electrical conductive type of the p-GaN film from p-type to n-type. Multiple implantation method is also used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implant energies for the multiple implantation are 40, 100, and 200 KeV. The implant dose is 5×10 15 cm -2 for each implant energy. After implantation, the samples are annealed in a N 2 ambient for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000°C. The carrier activation energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si implantation in p-GaN. Moreover, the rectifying I-V characteristic of the p-n GaN diode is also examined.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.L802
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 4
    Online Resource
    Online Resource
    P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si 1-x Ge x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 10A ( 1999-10-01), p. L1099-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 10A ( 1999-10-01), p. L1099-
    Abstract: The p-channel metal oxide semiconductor field effect transistors (MOSFETs) with P + polycrystalline silicon-germanium (poly-Si 1- x Ge x ) gates have been successfully fabricated. The poly-Si 1- x Ge x gates were grown by ultra-high vacuum chemical vapor deposition (UHVCVD) system using Si 2 H 6 and GeH 4 gases. The deposition rate of poly-Si 1- x Ge x increases with increasing GeH 4 flow rate at small flow rate, and then decreases with increasing GeH 4 flow rate. This result was explained by the competition of two growth mechanisms on poly-Si 1- x Ge x surface. The gate oxide layer capped with a thin nitride layer was used to prevent the damage of gate oxide from UHVCVD deposition process. The fabricated MOSFETs exhibit well-behaved characteristics.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.L1099
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Epitaxy of Si 1-x Ge x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si 2 H 6 and GeH 4
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 7B ( 1995-07-01), p. L869-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 7B ( 1995-07-01), p. L869-
    Abstract: Disilane and germane were used to grow Si 1- x Ge x epilayers at 550° C by ultrahigh-vacuum chemical vapor deposition (UHVCVD). The solid composition x and growth rate of Si 1- x Ge x were evaluated from double-crystal X-ray rocking curves and show very strong dependence on the total source gas flow rate ( [ GeH 4 ]+[Si 2 H 6 ]) and the gas ratio ( [GeH 4 ]/[GeH 4 ]+[Si 2 H 6 ]). The solid composition increases with increase of the gas ratio and also with increasing the total source flux by keeping gas ratio constant. The growth rate increases with the solid composition at lower values and then becomes saturated in the higher composition range ( x 〉 0.22). The results can be explained by the relationships of the source fluxes, relative incorporation efficiency at activated surface sites and hydrogen desorption under different growth conditions.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.L869
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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