In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 9R ( 1997-09-01), p. 5680-
Abstract:
High-quality Si/Si 1- x Ge x strained-layer superlattices have been grown in the temperature range 525° C–550° C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si 1- x Ge x superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1 nm for growth at 525° C and 0.2 nm for growth at 550° C. A simple model for estimating the interfacial abruptness of Si/Si 1- x Ge x heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si 1- x Ge x interfaces. The Ge composition x of a Si/Si 1- x Ge x superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3–0.7 nm for growth at 525° C and 1–1.5 nm for growth at 550° C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.5680
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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