In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 22 ( 2010-11-29)
Abstract:
We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼104 and field-effect mobility of 0.4 cm2/V⋅s.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink