In:
Journal of Nanomaterials, Hindawi Limited, Vol. 2014 ( 2014), p. 1-6
Abstract:
Spectroscopic ellipsometry study was employed for phase pure VO 2 (M 1 ) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO 2 (M 1 ) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO 2 (M 1 ) thin films rapidly increase with decreasing O 2 -Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge ( E 1 ) at varied O 2 -Ar ratios are almost the same (~2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition ( E 2 ) decreases from 0.53 to 0.18 eV with decreasing O 2 -Ar ratios.
Type of Medium:
Online Resource
ISSN:
1687-4110
,
1687-4129
Language:
English
Publisher:
Hindawi Limited
Publication Date:
2014
detail.hit.zdb_id:
2229480-6
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