In:
physica status solidi (a), Wiley, Vol. 217, No. 5 ( 2020-03)
Abstract:
Selectors are considered some of the most significant devices applied to the integration of resistive random access memory (RRAM). Self‐compliance selectors promote the stability of one selector and one resistor (1S1R) cell to reduce additional compliance current circuits without compromising RRAM switching performance. Herein, a Ni/HfO x /Ni bipolar selector with special cluster microstructures is fabricated via a facial magnetron sputtering technology, which has self‐compliance (±12 μA) performance and ultrahigh voltage endurance (±10 V). To investigate the mechanism, theoretical models for the self‐compliance selectors are proposed. The results demonstrate that traps and special interfaces are formed through redox reactions. Resistive switching properties are caused by the trap‐to‐trap tunneling structure of the HfO x –NiO y layers. At the interfaces of HfO x –NiO y oxide layers, the tunneling current reaches a saturation state, leading to the self‐compliance phenomenon, which provides a theoretical and research foundation for the development of RRAM technology.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201900934
Language:
English
Publisher:
Wiley
Publication Date:
2020
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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