In:
Applied Physics Letters, AIP Publishing, Vol. 120, No. 12 ( 2022-03-21)
Abstract:
In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As a key step during the fabrication, the impact of the wet-etching process on device performance is systematically studied. By virtue of the reduced surface states at the sidewall, the performance of NR SBD with the wet-etching process is substantially improved, delivering a forward turn-on voltage of 0.65 V, a current density of ∼10 kA/cm2 at 3 V, an ideality factor of 1.03, an ON/OFF current ratio of ∼1010, and no severe current collapse, along with a reverse breakdown voltage of 772 V.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2022
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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