In:
Applied Physics Letters, AIP Publishing, Vol. 112, No. 12 ( 2018-03-19)
Abstract:
The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of edge threading dislocations in GaN{0001} gives rise to a piezoelectric volume charge. The electric field produced by this charge distribution is strong enough to dissociate free excitons at distances over 100 nm from the dislocation line. We evaluate the impact of this effect on cathodoluminescence images of dislocations.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2018
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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