In:
Applied Physics Letters, AIP Publishing, Vol. 101, No. 17 ( 2012-10-22)
Abstract:
Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 × 1021 at./cm3. However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sbm-Vn complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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