In:
physica status solidi (b), Wiley, Vol. 248, No. 3 ( 2011-03), p. 600-604
Abstract:
GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X‐ray diffraction measurements reveal similar growth rates and In concentrations for c ‐plane, a ‐plane, and m ‐plane with In contents up to 40%. These results are in good agreement with optical experiments, in particular for homoepitaxial growth. However, there is strong evidence that the optical properties of the nonpolar heteroepitaxial GaInN QWs are dominated by the high density of stacking faults in those samples.
Type of Medium:
Online Resource
ISSN:
0370-1972
,
1521-3951
DOI:
10.1002/pssb.201046334
Language:
English
Publisher:
Wiley
Publication Date:
2011
detail.hit.zdb_id:
208851-4
detail.hit.zdb_id:
1481096-7
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