In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 9 ( 2022-09-01), p. 09LT01-
Abstract:
The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. The results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac8117
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
Permalink