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  • 1
    Online Resource
    Online Resource
    Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide (RuO2) for high dielectric applications
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 3 ( 1998-05-01), p. 1137-1141
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1137-1141
    Abstract: The Pt/Ta diffusion barrier using hybrid conductive oxide (RuO2) for dynamic random access memory and ferroelectric random access memory capacitor bottom electrodes is proposed. The thermal stability of Pt+RuO2 (50 nm)/Ta+RuO2 (50 nm)/TiSi2/poly-Si/SiO2/Si contact system is investigated and compared to that of the Pt(50 nm)/Ta(50 nm)/TiSi2/poly-Si/SiO2/Si contact system. The Pt+RuO2/Ta+RuO2/TiSi2/poly-Si/SiO2/Si contact system sustained its structure up to 650 °C, whereas Pt/Ta/TiSi2/poly-Si/SiO2/Si contact system was completely degraded after annealing at 650 °C. In the former case, the addition of ruthenium dioxide (RuO2) into the Pt bottom electrode layer led to retardation of the oxygen indiffusion, preventing the indiffusion of oxygen up to 650 °C. In addition, the Ta+RuO2 diffusion barrier showed an amorphous structure and RuO2 is bound to the Ta matrix, inhibiting the interdiffusion of O, Pt, and Si through grain boundaries which can act as fast diffusion paths up to high temperatures. Therefore, it appeared that the barrier properties of Pt/Ta diffusion barrier are improved by using hybrid conductive oxide (RuO2).
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590022
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 2 ( 1999-03-01), p. 731-733
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 2 ( 1999-03-01), p. 731-733
    Abstract: Silicon field emitters have been coated with nitrogenated amorphous carbon (a-C:N) in order to enhance the electron emission current. The coating was produced using a helical resonator plasma enhanced chemical vapor deposition system. The a-C:N film is amorphous and hydrogenated with about 30 at % hydrogen. Nitrogen is also included in the amorphous network and reduces the work function by doping. a-C:N coating enhances significantly the emission current of silicon tips.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590629
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Barrier properties of Ta–RuO2 diffusion barrier for dynamic random access memory capacitor bottom electrodes
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 4 ( 1999-07-01), p. 1470-1476
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 4 ( 1999-07-01), p. 1470-1476
    Abstract: We proposed the Ta–RuO2 diffusion barrier for oxygen in the dynamic random access memory capacitor bottom electrode, and investigated the barrier and electrical properties of the developed diffusion barrier. The Ta–RuO2/TiSi2/poly-Si/SiO2/Si contact system deposited with and without the SiO2 capping layer showed the lower total resistance and ohmic characteristics up to 800 °C. For the Ta–RuO2/TiSi2/poly-Si/SiO2/Si contact system, no other phases observed except for the formation of conductive RuO2 phase in the barrier film by reaction with the indiffused oxygen after annealing in air, but the thin oxidized layer at the Ta–RuO2/TiSi2 interface was formed by external oxygen. However, a large number of the crystallites in the annealed samples compared to that of as-deposited film were observed even after depth profile. The crystallites consisted of Ru and O containing a small amount of Ta. In addition, the embedded RuO2 crystalline phase was observed in the thin oxidized TiSi2 surface layer. Correspondingly, we suggest that the ohmic mechanism of the Ta–RuO2/TiSi2/poly-Si/SiO2/Si contact system is an embedded RuO2 crystalline phase involving a small amount of Ta in a Ta amorphous structure.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590776
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 4
    Online Resource
    Online Resource
    Oxidation resistance of tantalum–ruthenium dioxide diffusion barrier for memory capacitor bottom electrodes
    AIP Publishing ; 1998
    In:  Applied Physics Letters Vol. 73, No. 3 ( 1998-07-20), p. 324-326
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 73, No. 3 ( 1998-07-20), p. 324-326
    Abstract: The effect of the RuO2 addition into a Ta film on the oxidation resistance of a diffusion barrier for the Ta+RuO2/Si system was investigated. The Ta+RuO2/Si system was sustained up to 800 °C without an increase in resistivity, while the Ta/Si structure completely degraded after annealing at 450 °C. The Ta+RuO2 diffusion barrier showed an amorphous microstructure for an as-deposited state and formed a conductive RuO2 phase after annealing. Ta was sufficiently bound to oxygen of RuO2 for an as-deposited state, but RuO2 was divided into Ru and Ru–O binding states. Ta–O bonds showed a little change compared to the as-deposited state with increasing annealing temperature, whereas Ru–O bonds significantly increased. Therefore, the Ta layer deposited by the RuO2 addition effectively prevented the indiffusion of oxygen up to 800 °C and its oxidation resistance was superior to those of polycrystalline nitride (TiN, TaN) and ternary amorphous (TaSiN) barriers reported by others.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.121822
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Investigation of Ta–RuO2 diffusion barrier for high density memory capacitor applications
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 6 ( 1998-11-01), p. 3059-3064
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 6 ( 1998-11-01), p. 3059-3064
    Abstract: The properties of both oxygen indiffusion and oxidation resistance in a Ta+RuO2 layer for high density memory devices were investigated by using Rutherford backscattering spectroscopy, four point probe, x-ray diffraction, x-ray photoelectron spectroscopy, and planar transmission electron microscopy. The Ta+RuO2/Si system sustained up to 800 °C without an increase in resistivity. The Ta+RuO2 diffusion barrier showed a Ta amorphous microstructure and an embedded RuOx nanocrystalline structure in the as-deposited state. The Ta+RuO2 film showed the formation of RuO2 phase by reaction with the indiffused oxygen from atmosphere after annealing in an air ambient. The Ta+RuO2 diffusion barrier showed that Ta is sufficiently bound to oxygen in the as-deposited state, but RuO2 consists of Ru and Ru–O binding state. The Ta–O bonds showed little change compared to the as-deposited state with increasing annealing temperature, whereas Ru–O bonds significantly increased and transformed to conductive oxide, RuO2. Therefore, the Ta layer deposited by RuO2 addition effectively prevented the indiffusion of oxygen up to 800 °C and its oxidation resistance was superior to various barriers reported by others.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590342
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
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  • 6
    Online Resource
    Online Resource
    Tantalum–ruthenium dioxide as a diffusion barrier between Pt bottom electrode and TiSi2 ohmic contact layer for high density capacitors
    AIP Publishing ; 1999
    In:  Journal of Applied Physics Vol. 86, No. 5 ( 1999-09-01), p. 2544-2549
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 86, No. 5 ( 1999-09-01), p. 2544-2549
    Abstract: The effects of RuO2 addition on the barrier properties of the Ta layer were investigated at the temperature range of 650–800 °C in air. For the Pt/Ta/TiSi2/poly-Si/SiO2/Si structure, its layer structure was completely collapsed after annealing at 650 °C, resulting in higher total resistance and Schottky characteristics. For the Pt/Ta+RuO2/TiSi2/poly-Si/SiO2/Si structure, however, it exhibited the lower total resistance and ohmic characteristics, and its layer structure was retained up to 800 °C. A Ta amorphous structure by the chemically strong Ta–O or Ta–Ru–O bonds and nonstoichiometric, nanocrystalline RuOx resulted in the formation of a conductive RuO2 phase in the Ta+RuO2 barrier film after an annealing, leading to the prevention of the interdiffusion of Pt, Si, and external oxygen through the diffusion barrier as well as surface oxidation up to 800 °C. Therefore, the thermal stability for the Pt/Ta+RuO2/TiSi2/poly-Si/SiO2/Si structure was higher than that for Pt/Ta/TiSi2/poly-Si/SiO2/Si structure.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.371090
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 7
    Online Resource
    Online Resource
    Structural, Optical, and Field Emission Properties of Hydrogenated Amorphous Carbon Films Grown by Helical Resonator Plasma Enhanced Chemical Vapor Deposition
    IOP Publishing ; 1998
    In:  Japanese Journal of Applied Physics Vol. 37, No. 2R ( 1998-02-01), p. 440-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 2R ( 1998-02-01), p. 440-
    Abstract: Hydrogenated amorphous carbon films have been prepared by helical resonator plasma enhanced chemical vapor deposition using CH 4 and H 2 mixtures. Films with various physical properties were obtained from different deposition conditions. The structural and optical properties of hydrogenated amorphous carbon (a-C:H) films were more sensitive to the substrate bias than the substrate temperature. This reflects that the energetic ion bombardment modified the films more effectively than the thermal energy. The a-C:H films deposited with no bias applied show characteristics of polymeric films with a large content of C–H bond while the a-C:H films deposited as a function of the substrate temperature at a bias of 40 W show characteristics ranging from diamond-like carbon (DLC) to graphitic nature with a significantly reduced C–H bond. From elastic recoil detection analysis, the hydrogen content in the films also significantly reduced with an increase of substrate temperature at a bias of 40 W. The field emission from bare Si emitters and a-C:H coated Si emitters has been examined in an ultrahigh vacuum chamber. The field emission characteristic of the a-C:H coated Si emitters is better than that of the bare Si emitters. For the a-C:H coated Si emitters, the emission current of the a-C:H coated (at 150°C/40 W) Si emitters is higher than the that of the a-C:H coated (at 260°C/40 W) Si emitters. This difference in field emission characteristic is attributed to the structural and optical properties as well as hydrogen content.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.37.440
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 8
    Online Resource
    Online Resource
    Ex situ formation of oxide-interlayer-mediated-epitaxial CoSi2 film using Ti capping
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 1 ( 1999-01-01), p. 162-165
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 1 ( 1999-01-01), p. 162-165
    Abstract: A modified oxide mediated epitaxy process using a single deposition and ex situ annealing by Ti capping has been developed in this study. With pure Co on Shiraki oxide, the reaction between Co and Si did not occur even at 800 °C during ex situ annealing, because of the adsorption of oxygen on the Co film. However, when the pure Co on the Shiraki oxide was capped by Ti, a uniform Ti oxide surface layer was formed during the initial stage of annealing, which had a role to eliminate the adsorption of oxygen on the Co film. It led to uniform Co diffusion into the Si substrate through the Shiraki oxide, resulting in epitaxial CoSi2. A good channeling χmin value of 18% comparable to that of the Ti/Co bilayer system was measured in the epitaxial CoSi2 formed from this modified oxide mediated epitaxy process.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590530
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
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  • 9
    Online Resource
    Online Resource
    Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film
    AIP Publishing ; 1998
    In:  Applied Physics Letters Vol. 72, No. 22 ( 1998-06-01), p. 2832-2834
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 72, No. 22 ( 1998-06-01), p. 2832-2834
    Abstract: In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of insertion of a thin Zr layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr layer into Ta film improved barrier properties significantly when the Ta/Zr/Ta barrier layers were deposited with concurrent ion bombardment. The significant improvement of Ta diffusion barrier properties by insertion of a thin Zr layer into Ta film with ion bombardment was attributed to the densification of grain boundaries in Ta/Zr/Ta films and the formation of an intermixing layer between Ta and Zr by ion bombardment, followed by the reduction of fast diffusion of Cu through Ta/Zr/Ta films.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.121472
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
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    Online Resource
    Tantalum-microcrystalline CeO2 diffusion barrier for copper metallization
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 83, No. 3 ( 1998-02-01), p. 1333-1336
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 83, No. 3 ( 1998-02-01), p. 1333-1336
    Abstract: A tantalum diffusion barrier incorporating microcrystalline CeO2 is proposed for Cu metallization and investigated using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. The Cu/Ta+CeO2/Si contact system retained its structure up to 800 °C without an increase in resistivity. The cerium dioxide (CeO2) was stuffed along the grain boundaries during the deposition of Ta layer. Because of its heavier atomic weight than O2- or N2-stuffed elements, it inhibited an interdiffusion of Cu and Si through grain boundaries which can act as fast diffusion paths. It also resulted in preventing the outdiffusion of Ta into the overlayer Cu as well as suppressing the formation of Ta silicide up to 800 °C. It appears that the barrier properties of the tantalum incorporating microcrystalline CeO2 are superior to polycrystalline transition metal barriers, polycrystalline nitride barriers, ternary amorphous compound barriers, and N2- and O2-stuffed barriers.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.366834
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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