In:
Applied Physics Letters, AIP Publishing, Vol. 93, No. 7 ( 2008-08-18)
Abstract:
We have developed a method of formation of atomically smooth Si∕SiO2 interfaces by oxidation of atomically flat Si(111) surfaces by use of azeotropic nitric acid (HNO3) aqueous solutions (i.e., 68wt% HNO3 at 121°C). For the SiO2 layer on the atomically smooth Si substrates, the concentration of suboxide species, Si2+, is ∼50% of that on the rough Si substrates, and the valence band discontinuity is higher by ∼0.1eV. In this case, the leakage current flowing through the ∼1.2nm SiO2 is low, and further decreased by postmetallization annealing at 250°C in hydrogen (e.g., 0.5A∕cm2 at VG=1V).
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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