In:
Journal of Applied Physics, AIP Publishing, Vol. 57, No. 10 ( 1985-05-15), p. 4778-4782
Abstract:
The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a-Si:H PSDs) which employ a tunnel metal-insulator-semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a-Si:H PSD structure, since it offers high breakdown voltage compared to a-Si:H pin or Schottky-type structures. PSD process includes two-step anodic oxidation of a-Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a-Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a-Si:H. The fabricated large-area, two-dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1985
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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