In:
Applied Physics Letters, AIP Publishing, Vol. 116, No. 23 ( 2020-06-08)
Abstract:
Infrared has been deeply involved in frontier research, modern technologies, and human society, which requires sensitive infrared detection and sensing, in particular, array imaging. A charge-sensitive infrared phototransistor (CSIP) device is made of a GaAs/AlGaAs double quantum well and has been shown to exhibit much larger infrared photoresponsivity than conventional infrared photodetectors, attributable to its built-in amplification mechanism of large transconductance. In this work, we propose and demonstrate a linear array architecture of long wavelength CSIPs with each pixel directly addressable via its reset gate. The performance of a prototype 1×8 linear array of CSIPs is studied at 5 K, and each pixel shows a large photoresponsivity of & gt;50 A/W at the peak wavelength of λ=11 μm, nearly two orders higher than conventional detectors. Using a home-made multi-channel pulse generator, the array is operated at a typical frame rate of ∼5 ms, without the necessity of using cryogenic readout circuits. Besides, the fabrication of the proposed CSIP array requires only state-of-the-art planar technology; our work, therefore, provides a promising solution to realize very sensitive and small-scale array infrared imaging for sensitive long-wavelength infrared applications.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2020
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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