In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 108-109 ( 2005-12), p. 395-400
Abstract:
In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.108-109
DOI:
10.4028/www.scientific.net/SSP.108-109.395
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2005
detail.hit.zdb_id:
2051138-3
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