In:
ECS Transactions, The Electrochemical Society, Vol. 58, No. 7 ( 2013-08-31), p. 175-180
Abstract:
In this paper, we optimize the thermal stability of WAl 2 O 3 Cu and WAl 2 O 3 Cu-Te conductive-bridging cells for integration of 1-Transistor/1-Resistor (1T1R) memory elements. Thermal stability up to the back-end-of-line (BEOL) processing temperature of 400°C is ensured by Cu-Te composition tuning and carbon alloying developments, while Cu in-diffusion processes during BEOL processing is limited through the engineering of thin Ti-, Ta-, and TiW-based metallic liners inserted at the Al 2 O 3 Cu(-Te) interface. The integrated 1T1R cells are demonstrated to operate in the nanosecond range using moderate voltages. Write endurance of 〉 10 6 cycles is achieved using 10ns-short pulses while high voltage-disturb robustness is observed at lower voltages, resulting in excellent voltage-time characteristics of the cells. Finally, images of device filaments programmed in low- and high-resistance states are successfully obtained by means of conductive atomic-force-microscopy
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05807.0175ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
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